SI4455 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 150V 2A 8SO
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | FET Type | Technology | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 295 mOhm | 8-SOIC | -55 °C | 150 °C | 2 A | 8-SOIC | 3.9 mm | 0.154 in | 4 V | 150 V | 5.9 W | 20 V | 6 V 10 V | 1190 pF | Surface Mount | P-Channel | MOSFET (Metal Oxide) | 42 nC |
Vishay General Semiconductor - Diodes Division | 295 mOhm | 8-SOIC | -55 °C | 150 °C | 2.8 A | 8-SOIC | 3.9 mm | 0.154 in | 4 V | 150 V | 3.1 W 5.9 W | 20 V | 10 V | 1190 pF | Surface Mount | P-Channel | MOSFET (Metal Oxide) | 42 nC |