Discrete Semiconductor Products

AOUS66416

NRND

MOSFET N-CH 40V 33A/69A ULTRASO8

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Discrete Semiconductor Products

NRND

MOSFET N-CH 40V 33A/69A ULTRASO8

Technical Specifications

Parameters and characteristics for this part

Specification	AOUS66416

Current - Continuous Drain (Id) @ 25°C	69 A, 33 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2575 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-PowerSMD, Flat Leads
Power Dissipation (Max)	73.5 W, 6.2 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	UltraSO-8™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Alpha & Omega Semiconductor Inc. AOUS66416	MOSFET (Metal Oxide)	33 A 69 A	50 nC	40 V	2575 pF	N-Channel	20 V	UltraSO-8™	6.2 W 73.5 W	4.5 V 10 V	3-PowerSMD Flat Leads	2.5 V	150 °C	-55 °C	Surface Mount	3.3 mOhm
Alpha & Omega Semiconductor Inc. AOUS66414	MOSFET (Metal Oxide)	40 A 92 A		40 V	4350 pF	N-Channel	20 V	UltraSO-8™	6.2 W 92 W	4.5 V 10 V	3-PowerSMD Flat Leads	2.3 V	150 °C	-55 °C	Surface Mount	2.2 mOhm	80 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 33A (Ta), 69A (Tc) 6.2W (Ta), 73.5W (Tc) Surface Mount UltraSO-8™

Technical documentation and resources