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STMICROELECTRONICS STL10N60M6
Discrete Semiconductor Products

STL12N60M6

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STMicroelectronics

N-CHANNEL 600 V, 390 MOHM TYP., 6.4 A MDMESH M6 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

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STMICROELECTRONICS STL10N60M6
Discrete Semiconductor Products

STL12N60M6

Active
STMicroelectronics

N-CHANNEL 600 V, 390 MOHM TYP., 6.4 A MDMESH M6 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL12N60M6
Current - Continuous Drain (Id) @ 25°C6.4 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.3 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)48 W
Rds On (Max) @ Id, Vgs [Max]490 mOhm
Supplier Device PackagePowerFlat™ (5x6) HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

STL12N60M2 Series

N-channel 600 V, 390 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package

PartVgs(th) (Max) @ IdPower Dissipation (Max)Operating Temperature [Min]Operating Temperature [Max]Supplier Device PackageDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)FET TypeMounting TypeVgs (Max)Current - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsPackage / CaseTechnologyRds On (Max) @ Id, Vgs [Max]Rds On (Max) @ Id, VgsSupplier Device Package [x]Supplier Device Package [y]Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ Vgs [Max]
STMICROELECTRONICS STL10N60M6
STMicroelectronics
4.75 V
48 W
-55 °C
150 °C
PowerFlat™ (5x6) HV
600 V
10 V
N-Channel
Surface Mount
25 V
6.4 A
12.3 nC
8-PowerVDFN
MOSFET (Metal Oxide)
490 mOhm
8-PowerFlat
STMicroelectronics
4.5 V
52 W
-55 °C
150 °C
PowerFlat™ (3.3x3.3)
100 V
10 V
N-Channel
Surface Mount
20 V
44 A
30 nC
8-PowerVDFN
MOSFET (Metal Oxide)
13.3 mOhm
3.3
3.3
1820 pF
8PowerVDFN
STMicroelectronics
4 V
52 W
-55 °C
150 °C
PowerFlat™ (5x6) HV
600 V
10 V
N-Channel
Surface Mount
25 V
6.5 A
8-PowerVDFN
MOSFET (Metal Oxide)
495 mOhm
538 pF
16 nC
8-PowerVDFN
STMicroelectronics
4 V
75 W
-55 °C
175 ░C
PowerFlat™ (5x6)
60 V
10 V
P-Channel
Surface Mount
20 V
4 A
6.4 nC
8-PowerVDFN
MOSFET (Metal Oxide)
160 mΩ
340 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.86
10$ 1.55
100$ 1.23
500$ 1.04
1000$ 0.88
Digi-Reel® 1$ 1.86
10$ 1.55
100$ 1.23
500$ 1.04
1000$ 0.88
Tape & Reel (TR) 3000$ 0.79
6000$ 0.78
NewarkEach (Supplied on Cut Tape) 1$ 1.60

Description

General part information

STL12N60M2 Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources