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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC8400-SX |
|---|---|
| Current - Supply | 67 mA |
| Frequency [Max] | 30 GHz |
| Frequency [Min] | 2 GHz |
| Gain | 13.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 2 dB |
| P1dB | 14.5 dBm |
| Package / Case | Die |
| RF Type | VSAT |
| Supplier Device Package | Die |
| Test Frequency | 6 GHz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HMC8400-DIE Series
The HMC8400 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8400 is a wideband low noise amplifier that operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm output IP3, and 14.5 dBm of output power at 1 dB gain compres-sion, requiring 67 mA from a 5 V supply. The HMC8400 is self biased with only a single positive supply needed to achieve a drain current IDDof 67 mA. The HMC8400 also has a gain control option, VGG2. The HMC8400 amplifier input/outputs are internally matched to 50 Ω and dc blocked, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).ApplicationsTest instrumentationMicrowave radios and very small aperture terminals (VSATs)Military and spaceTelecommunications infrastructureFiber optics
Documents
Technical documentation and resources