Discrete Semiconductor Products

SI4409DY-T1-E3

Obsolete

MOSFET P-CH 150V 1.3A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 150V 1.3A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4409DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	332 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	4.6 W, 2.2 W
Rds On (Max) @ Id, Vgs [Max]	1.2 Ohm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI4409DY-T1-E3	Surface Mount	4 V	332 pF	150 V	6 V 10 V	2.2 W 4.6 W	-55 °C	150 °C	1.3 A	P-Channel	8-SOIC	3.9 mm	0.154 in	20 V	8-SOIC	MOSFET (Metal Oxide)	12 nC	1.2 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 150 V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SOIC

Technical documentation and resources