SI4409 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 150V 1.3A 8SO
| Part | Mounting Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Vgs (Max) | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Surface Mount | 4 V | 332 pF | 150 V | 6 V 10 V | 2.2 W 4.6 W | -55 °C | 150 °C | 1.3 A | P-Channel | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 8-SOIC | MOSFET (Metal Oxide) | 12 nC | 1.2 Ohm |