Integrated Circuits (ICs)

LMG5200MOFT

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80V GAN HALF BRIDGE POWER STAGE

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Search across all available documentation for this part.

DocumentsFive benefits of enhanced PWM rejection for in-line motor control Dual Motor Ctl Using FCL and Perf Analysis Using SFRA on TMS320F28379D LaunchPad (Rev. A)+33

Integrated Circuits (ICs)

LMG5200MOFT

Active

Texas Instruments

80V GAN HALF BRIDGE POWER STAGE

Deep-Dive with AI

DocumentsFive benefits of enhanced PWM rejection for in-line motor control Dual Motor Ctl Using FCL and Perf Analysis Using SFRA on TMS320F28379D LaunchPad (Rev. A)+33

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LMG5200MOFT

Applications	Synchronous Buck Converters
Current - Output / Channel	10 A
Fault Protection	UVLO
Features	Bootstrap Circuit
Interface	Logic
Load Type	Inductive
Mounting Type	Surface Mount
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	9-QFN
Rds On (Typ)	15 mOhm
Supplier Device Package	9-QFN (8x6)
Technology	Gallium Nitride (GaN) FETs
Voltage - Load	80 V
Voltage - Supply [Max]	5.25 V
Voltage - Supply [Min]	4.75 V

LMG5200 Series

Part	Utilized IC / Part	Contents	Type	Supplied Contents	Function	Secondary Attributes	Interface	Rds On (Typ)	Operating Temperature [Min]	Operating Temperature [Max]	Features	Package / Case	Mounting Type	Technology	Applications	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Voltage - Load	Load Type	Current - Output / Channel	Fault Protection
Texas Instruments LMG5200EVM-02	LMG5200	Board(s)	Power Management	Board(s)	Half H-Bridge Driver (Internal FET)	On-Board LEDs Test Points
Texas Instruments LMG5200MOFT							Logic	15 mOhm	-40 °C	125 ¯C	Bootstrap Circuit	9-QFN	Surface Mount	Gallium Nitride (GaN) FETs	Synchronous Buck Converters	4.75 V	5.25 V	9-QFN (8x6)	80 V	Inductive	10 A	UVLO
Texas Instruments LMG5200MOFR							Logic	15 mOhm	-40 °C	125 ¯C	Bootstrap Circuit	9-QFN	Surface Mount	Gallium Nitride (GaN) FETs	Synchronous Buck Converters	4.75 V	5.25 V	9-QFN (8x6)	80 V	Inductive	10 A	UVLO

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 14.56
		10	$ 13.38
		25	$ 12.83
		100	$ 11.30
	Digi-Reel®	1	$ 14.56
		10	$ 13.38
		25	$ 12.83
		100	$ 11.30
	Tape & Reel (TR)	250	$ 10.75
		500	$ 10.05
Texas Instruments	SMALL T&R	1	$ 11.39
		100	$ 9.95
		250	$ 7.67
		1000	$ 6.86

Description

General part information

LMG5200 Series

The LMG5200 device, an 80-V, 10-A driver plus GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG5200 device is available in a 6 mm × 8 mm × 2 mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

Documents

Technical documentation and resources

LMG5200MOFT

Deep-Dive with AI

LMG5200MOFT

Deep-Dive with AI

Technical Specifications

LMG5200 Series

Pricing

Description

LMG5200 Series

Documents

Five benefits of enhanced PWM rejection for in-line motor control

Dual Motor Ctl Using FCL and Perf Analysis Using SFRA on TMS320F28379D LaunchPad (Rev. A)

Advancing Power Supply Solutions Through the Promise of GaN

What’s next for Industry 4.0? The best new technologies shaping the future of smar

Get into electromagnetic compliance with GaN

Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more!

The sound of GaN

GaN power module performance advantage in DC/DC converters

The power to innovate industrial design

Redefining power management through high-voltage innovation

Let’s GaN together, reliably

GaN reliability standards reach milestone

Using the LMG5200EVM-02 GaN Half-Bridge Power Stage EVM

Performance Analysis of Fast Current Loop (FCL) in Servo

Rethinking server power architecture in a post-silicon world: Getting from 48 Vin

The power to do even more with GaN

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage datasheet (Rev. E)

Gallium nitride: supporting applications from watts to kilowatts

GaN to the rescue! Part 1: Body-diode reverse recovery

Enabling 48V-to-POL single-stage conversion with GaN

Simulating electromagnetic interference – is it possible?

Dual-Axis Motor Control Using FCL and SFRA On a Single C2000™ MCU

Control a GaN half-bridge power stage with a single PWM signal

GaN to the rescue! Part 2: Measurements

Control a GaN power stage with a Hercules™ LaunchPad™ development kit – part 1

Layout Guidelines for LMG5200 ~ 80-V, 10-A, GaN Power Stage Module (Rev. A)

Current Sense Amplifiers (Rev. E)

Are you accurately measuring the picosecond rise time of your GaN device?

Using the LMG5200POLEVM-10A GaN 48V-1V Point-of-Load EVM (Rev. B)

Enabling high-voltage power delivery through the power process chain

Control a GaN power stage with a Hercules™ LaunchPad™ development kit – part 2

A comprehensive methodology to qualify the reliability of GaN products

BOOSTXL-3PhGaNInv Evaluation Module User Guide (Rev. A)

Gallium nitride transistors open up new frontiers in high-speed motor drives

Does GaN Have a Body Diode?

LMG5200 Series