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SOIC (D)
Integrated Circuits (ICs)

TPL7407LADR

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Texas Instruments

30-V, 7-CH NMOS ARRAY LOW-SIDE DRIVER

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SOIC (D)
Integrated Circuits (ICs)

TPL7407LADR

Active
Texas Instruments

30-V, 7-CH NMOS ARRAY LOW-SIDE DRIVER

Technical Specifications

Parameters and characteristics for this part

SpecificationTPL7407LADR
Current - Output (Max) [Max]500 mA
Input TypeCMOS
InterfaceParallel
Mounting TypeSurface Mount
Number of Outputs7
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Output ConfigurationLow Side
Output TypeN-Channel
Package / Case16-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Ratio - Input:Output [custom]1:1
Supplier Device Package16-SOIC
Switch TypeRelay, Solenoid Driver
Voltage - Load30 V
Voltage - Supply (Vcc/Vdd) [Max]30 V
Voltage - Supply (Vcc/Vdd) [Min]6.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.62
10$ 0.53
25$ 0.50
100$ 0.40
250$ 0.37
500$ 0.31
1000$ 0.24
Digi-Reel® 1$ 0.62
10$ 0.53
25$ 0.50
100$ 0.40
250$ 0.37
500$ 0.31
1000$ 0.24
Tape & Reel (TR) 2500$ 0.18
Texas InstrumentsLARGE T&R 1$ 0.41
100$ 0.28
250$ 0.21
1000$ 0.14

Description

General part information

TPL7407LA-Q1 Series

The TPL7407LA-Q1 is a high-voltage, high-current NMOS transistor array. This device consists of seven NMOS transistors that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The maximum drain-current rating of a single NMOS channel is 600 mA. New regulation and drive circuitry added to give maximum drive strength across all GPIO ranges (1.8 V–5 V).The transistors can be paralleled for higher current capability.

The TPL7407LA-Q1 key benefit is its improved power efficiency and lower leakage than a Bipolar Darlington Implementation. With the lower VOLthe user is dissipating less than half the power than traditional relay drivers with currents less than 250 mA per channel.

The TPL7407LA-Q1 is a high-voltage, high-current NMOS transistor array. This device consists of seven NMOS transistors that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The maximum drain-current rating of a single NMOS channel is 600 mA. New regulation and drive circuitry added to give maximum drive strength across all GPIO ranges (1.8 V–5 V).The transistors can be paralleled for higher current capability.