TPL7407LA-Q1 Series

30-V, 7-ch automotive NMOS array low-side driver

Catalog

30-V, 7-ch automotive NMOS array low-side driver

Part	Current - Output (Max) [Max]	Output Type	Output Configuration	Input Type	Ratio - Input:Output [custom]	Voltage - Load [Max]	Switch Type	Mounting Type	Supplier Device Package	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Number of Outputs	Package / Case [x]	Package / Case	Package / Case [y]	Interface	Voltage - Load	Grade	Qualification
Texas Instruments TPL7407LPWR	500 mA	N-Channel	Low Side	CMOS	1:1	40 V	Relay Solenoid Driver	Surface Mount	16-TSSOP	40 V	8.5 V	-40 °C	125 °C	7	0.173 in	16-TSSOP	4.4 mm	Parallel
Texas Instruments TPL7407LAPWR	500 mA	N-Channel	Low Side	CMOS	1:1		Relay Solenoid Driver	Surface Mount	16-TSSOP	30 V	6.5 V	-40 °C	125 °C	7	0.173 in	16-TSSOP	4.4 mm	Parallel	30 V
Texas Instruments TPL7407LADR	500 mA	N-Channel	Low Side	CMOS	1:1		Relay Solenoid Driver	Surface Mount	16-SOIC	30 V	6.5 V	-40 °C	125 °C	7	0.154 in	16-SOIC	3.9 mm	Parallel	30 V
Texas Instruments TPL7407LDR	500 mA	N-Channel	Low Side	CMOS	1:1	40 V	Relay Solenoid Driver	Surface Mount	16-SOIC	40 V	8.5 V	-40 °C	125 °C	7	0.154 in	16-SOIC	3.9 mm	Parallel
Texas Instruments TPL7407LAQPWRQ1	500 mA	N-Channel	Low Side	CMOS	1:1		Relay Solenoid Driver	Surface Mount	16-TSSOP	30 V	6.5 V	-40 °C	125 °C	7	0.173 in	16-TSSOP	4.4 mm	Parallel	30 V	Automotive	AEC-Q100

Catalog

30-V, 7-ch automotive NMOS array low-side driver

Key Features

• Qualified for Automotive ApplicationsAEC-Q100 Qualified With the Following Results:Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature RangeDevice HBM ESD Classification Level 2Device CDM ESD Classification Level C4B600-mA Rated Drain Current (Per Channel)CMOS Pin-to-Pin Improvement of 7-channel Darlington Array (For Example: ULN2003A)Power Efficient (Very low VOL)Less Than 4 Times Lower VOLat 100 mA Than Darlington ArrayVery Low Output Leakage < 10 nA Per ChannelHigh-Voltage Outputs 30 VCompatible with 1.8-V to 5-V Microcontroller and Logic InterfaceInternal Free-wheeling Diodes for Inductive Kick-back ProtectionInput Pull-down Resistors Allows Tri-stating the Input DriverInput RC-Snubber to Eliminate Spurious Operation in Noisy EnvironmentESD Protection Exceeds JESD 222-kV HBM, 500-V CDMQualified for Automotive ApplicationsAEC-Q100 Qualified With the Following Results:Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature RangeDevice HBM ESD Classification Level 2Device CDM ESD Classification Level C4B600-mA Rated Drain Current (Per Channel)CMOS Pin-to-Pin Improvement of 7-channel Darlington Array (For Example: ULN2003A)Power Efficient (Very low VOL)Less Than 4 Times Lower VOLat 100 mA Than Darlington ArrayVery Low Output Leakage < 10 nA Per ChannelHigh-Voltage Outputs 30 VCompatible with 1.8-V to 5-V Microcontroller and Logic InterfaceInternal Free-wheeling Diodes for Inductive Kick-back ProtectionInput Pull-down Resistors Allows Tri-stating the Input DriverInput RC-Snubber to Eliminate Spurious Operation in Noisy EnvironmentESD Protection Exceeds JESD 222-kV HBM, 500-V CDM

Description

The TPL7407LA-Q1 is a high-voltage, high-current NMOS transistor array. This device consists of seven NMOS transistors that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The maximum drain-current rating of a single NMOS channel is 600 mA. New regulation and drive circuitry added to give maximum drive strength across all GPIO ranges (1.8 V–5 V).The transistors can be paralleled for higher current capability. The TPL7407LA-Q1 key benefit is its improved power efficiency and lower leakage than a Bipolar Darlington Implementation. With the lower VOLthe user is dissipating less than half the power than traditional relay drivers with currents less than 250 mA per channel. The TPL7407LA-Q1 is a high-voltage, high-current NMOS transistor array. This device consists of seven NMOS transistors that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The maximum drain-current rating of a single NMOS channel is 600 mA. New regulation and drive circuitry added to give maximum drive strength across all GPIO ranges (1.8 V–5 V).The transistors can be paralleled for higher current capability. The TPL7407LA-Q1 key benefit is its improved power efficiency and lower leakage than a Bipolar Darlington Implementation. With the lower VOLthe user is dissipating less than half the power than traditional relay drivers with currents less than 250 mA per channel.