CSD25310Q2T
Active-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 23.9 MOHM
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CSD25310Q2T
Active-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 23.9 MOHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD25310Q2T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 4.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 655 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 2.9 W |
| Rds On (Max) @ Id, Vgs | 23.9 mOhm |
| Supplier Device Package | 6-WSON (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.1 V |
CSD25310Q2 Series
-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Vgs (Max) | Technology | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 20 V | 1.1 V | 8 V | MOSFET (Metal Oxide) | 2.9 W | 20 A | Surface Mount | 23.9 mOhm | 655 pF | 1.8 V 4.5 V | P-Channel | 6-WSON (2x2) | -55 °C | 150 °C | 4.7 nC |
 Texas Instruments | 20 V | 1.1 V | 8 V | MOSFET (Metal Oxide) | 2.9 W | 20 A | Surface Mount | 23.9 mOhm | 655 pF | 1.8 V 4.5 V | P-Channel | 6-WSON (2x2) | -55 °C | 150 °C | 4.7 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.79 | |
| 10 | $ 0.64 | |||
| 100 | $ 0.50 | |||
| Digi-Reel® | 1 | $ 0.79 | ||
| 10 | $ 0.64 | |||
| 100 | $ 0.50 | |||
| Tape & Reel (TR) | 250 | $ 0.50 | ||
| 500 | $ 0.42 | |||
| 1250 | $ 0.42 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.96 | |
| 100 | $ 0.66 | |||
| 250 | $ 0.51 | |||
| 1000 | $ 0.34 | |||
Description
General part information
CSD25310Q2 Series
This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.
This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.
Documents
Technical documentation and resources