Discrete Semiconductor Products

MSC100SM70JCU3

Active

POWER FIELD-EFFECT TRANSISTOR, 124A I(D), 700V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

POWER FIELD-EFFECT TRANSISTOR, 124A I(D), 700V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

Specification	MSC100SM70JCU3

Current - Continuous Drain (Id) @ 25°C	124 A
Drain to Source Voltage (Vdss)	700 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	215 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	365 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	SOT-227 (ISOTOP®)
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id [Max]	2.4 V

700V, 15 mOhm, SOT-227, Buck Chopper mSiC™ MOSFET Module

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C
Microchip Technology MSC100SM70JCU3	-55 °C	150 °C	Chassis Mount	365 W	4500 pF	SOT-227-4 miniBLOC	SOT-227 (ISOTOP®)	700 V	215 nC	19 mOhm	N-Channel	2.4 V	-10 V	25 V	124 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

Technical documentation and resources