
Discrete Semiconductor Products
PHE13003A,126
ActiveWeEn Semiconductors Co., Ltd
TRANS NPN 400V 1A TO92-3
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Discrete Semiconductor Products
PHE13003A,126
ActiveWeEn Semiconductors Co., Ltd
TRANS NPN 400V 1A TO92-3
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PHE13003A,126 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power - Max [Max] | 2.1 W |
| Supplier Device Package | TO-92-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
PHE13 Series
| Part | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) | Mounting Type | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | Transistor Type | Operating Temperature | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() WeEn Semiconductors Co., Ltd | 12 A | 8 hFE | 100 µA | 400 V | Through Hole | TO-220AB | 2 V | 80 W | NPN | 150 °C | TO-220-3 | ||
![]() WeEn Semiconductors Co., Ltd | 4 A | 100 µA | 400 V | Through Hole | TO-220F | 1 V | 26 W | NPN | 150 °C | TO-220-3 Full Pack Isolated Tab | 10 hFE | ||
![]() WeEn Semiconductors Co., Ltd | Through Hole | TO-220F | TO-220-3 Full Pack Isolated Tab | ||||||||||
![]() WeEn Semiconductors Co., Ltd | 4 A | 100 µA | 400 V | Through Hole | TO-220AB | 1 V | 75 W | NPN | 150 °C | TO-220-3 | 10 hFE | ||
![]() WeEn Semiconductors Co., Ltd | 8 A | 200 µA | 400 V | Through Hole | TO-220AB | 350 mV | 80 W | NPN | 150 °C | TO-220-3 | 8 | ||
![]() WeEn Semiconductors Co., Ltd | 1.5 A | 100 µA | 400 V | Through Hole | TO-92-3 | 2.1 W | NPN | 150 °C | TO-226-3 TO-92-3 | 5 | |||
![]() WeEn Semiconductors Co., Ltd | 1 A | 1 mA | 400 V | Through Hole | TO-92-3 | 1.5 V | 2.1 W | NPN | 150 °C | TO-226-3 TO-92-3 | 10 | ||
![]() WeEn Semiconductors Co., Ltd | 1.5 A | 100 µA | 400 V | Through Hole | TO-92-3 | 2.1 W | NPN | 150 °C | TO-226-3 TO-92-3 | 5 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Box (TB) | 10000 | $ 0.07 | |
| 30000 | $ 0.07 | |||
| 50000 | $ 0.06 | |||
| 100000 | $ 0.06 | |||
Description
General part information
PHE13 Series
Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3
Documents
Technical documentation and resources
No documents available


