Discrete Semiconductor Products

S4D15120H

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DIODE SIL CARB 1.2KV 15A TO247AC

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Discrete Semiconductor Products

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DIODE SIL CARB 1.2KV 15A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	S4D15120H

Capacitance @ Vr, F	1200 pF
Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	35 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Reverse Recovery Time (trr)	Mounting Type	Speed	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
SMC Diode Solutions S4D15120A	0 ns	Through Hole	No Recovery Time	SiC (Silicon Carbide) Schottky	TO-220AC (TO-220-2)	35 µA	175 ░C	-55 C	1.8 V	TO-220-2	1200 pF	1.2 kV	15 A
SMC Diode Solutions S4D15120H	0 ns	Through Hole	No Recovery Time	SiC (Silicon Carbide) Schottky	TO-247AC	35 µA	175 ░C	-55 C	1.8 V	TO-247-2	1200 pF	1.2 kV	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 15A Through Hole TO-247AC

Technical documentation and resources