Discrete Semiconductor Products

S4D15120A

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DIODE SIL CARB 1.2KV 15A TO220AC

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Discrete Semiconductor Products

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DIODE SIL CARB 1.2KV 15A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	S4D15120A

Capacitance @ Vr, F	1200 pF
Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	35 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220AC (TO-220-2)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	15 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Supplier Device Package	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Speed
SMC Diode Solutions S4D15120A	1.8 V	15 A	SiC (Silicon Carbide) Schottky	15 A	TO-220-2	35 µA	175 ░C	-55 °C	0 ns	Through Hole	TO-220AC (TO-220-2)	1200 pF	1.2 kV	500 mA
SMC Diode Solutions S4D15120H	1.8 V	15 A	SiC (Silicon Carbide) Schottky	15 A	TO-247-2	35 µA	175 ░C	-55 °C	0 ns	Through Hole	TO-247AC	1200 pF	1.2 kV	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 15A Through Hole TO-220AC (TO-220-2)

Technical documentation and resources