Isolators

NCD57001FDWR2G

Active

ON Semiconductor

GATE DRIVER, 1 CHANNELS, HALF BRIDGE, IGBT, MOSFET, SIC MOSFET, 16 PINS, WSOIC

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Datasheet +2

Isolators

NCD57001FDWR2G

Active

ON Semiconductor

GATE DRIVER, 1 CHANNELS, HALF BRIDGE, IGBT, MOSFET, SIC MOSFET, 16 PINS, WSOIC

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NCD57001FDWR2G

Approval Agency	UL, VDE
Common Mode Transient Immunity (Min) [Min]	100 V/ns
Current - DC Forward (If) (Max) [Max]	10 mA
Current - Peak Output	7.8 A, 7.1 A
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	16-SOIC
Package / Case [x]	0.295 in
Package / Case [y]	7.5 mm
Propagation Delay tpLH / tpHL (Max) [custom]	90 ns
Propagation Delay tpLH / tpHL (Max) [custom]	90 ns
Pulse Width Distortion (Max) [Max] [x]	15 ns
Rise / Fall Time (Typ) [custom]	10 ns
Rise / Fall Time (Typ) [custom]	15 ns
Supplier Device Package	16-SOIC
Technology	Capacitive Coupling
Voltage - Output Supply [Max]	24 V
Voltage - Output Supply [Min]	0 V

NCD57001FDWR2G Series

Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation

Part	Approval Agency	Mounting Type	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Common Mode Transient Immunity (Min) [Min]	Current - Peak Output	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Current - DC Forward (If) (Max) [Max]	Technology	Package / Case [x]	Package / Case	Package / Case [y]	Number of Channels	Supplier Device Package	Pulse Width Distortion (Max) [Max] [x]
ON Semiconductor NCD57001DWR2G	UL VDE	Surface Mount	90 ns	90 ns	24 V	0 V	100 V/ns	7.1 A 7.8 A	10 ns	15 ns	-40 °C	125 ¯C	10 mA	Capacitive Coupling	0.295 in	16-SOIC	7.5 mm	1	16-SOIC	15 ns
ON Semiconductor NCD57001FDWR2G	UL VDE	Surface Mount	90 ns	90 ns	24 V	0 V	100 V/ns	7.1 A 7.8 A	10 ns	15 ns	-40 °C	125 ¯C	10 mA	Capacitive Coupling	0.295 in	16-SOIC	7.5 mm	1	16-SOIC	15 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.89
		10	$ 4.11
		100	$ 3.32
		500	$ 2.95
	Digi-Reel®	1	$ 4.89
		10	$ 4.11
		100	$ 3.32
		500	$ 2.95
	Tape & Reel (TR)	1000	$ 2.53
		2000	$ 2.38
Newark	Each (Supplied on Cut Tape)	1	$ 5.08
		10	$ 3.64
		25	$ 3.59
		50	$ 3.15
		100	$ 2.71
		250	$ 2.70
		500	$ 2.39
		1000	$ 2.37
ON Semiconductor	N/A	1	$ 2.10

Description

General part information

NCD57001FDWR2G Series

NCD57001FDWR2G is a high−current single channel SiC/MOSFET/IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCD57001FDWR2G accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57001FDWR2G provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCD57001 is available in the wide−body SOIC−16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-751G-03-SOIC-16 WB

Package Drawing