NCD57001FDWR2G Series

Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation

Catalog

Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation

Part	Approval Agency	Mounting Type	Propagation Delay tpLH / tpHL (Max) [custom]	Propagation Delay tpLH / tpHL (Max) [custom]	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Common Mode Transient Immunity (Min) [Min]	Current - Peak Output	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Current - DC Forward (If) (Max) [Max]	Technology	Package / Case [x]	Package / Case	Package / Case [y]	Number of Channels	Supplier Device Package	Pulse Width Distortion (Max) [Max] [x]
ON Semiconductor NCD57001DWR2G	UL VDE	Surface Mount	90 ns	90 ns	24 V	0 V	100 V/ns	7.1 A 7.8 A	10 ns	15 ns	-40 °C	125 ¯C	10 mA	Capacitive Coupling	0.295 in	16-SOIC	7.5 mm	1	16-SOIC	15 ns
ON Semiconductor NCD57001FDWR2G	UL VDE	Surface Mount	90 ns	90 ns	24 V	0 V	100 V/ns	7.1 A 7.8 A	10 ns	15 ns	-40 °C	125 ¯C	10 mA	Capacitive Coupling	0.295 in	16-SOIC	7.5 mm	1	16-SOIC	15 ns

Catalog

Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation

Key Features

• High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages

• Short Propagation Delays with Accurate Matching

• DESAT with Soft Turn Off

• Active Miller Clamp and Negative Gate Voltage

• High Transient & Electromagnetic Immunity

• 5 kV Galvanic Isolation

Description

NCD57001FDWR2G is a high−current single channel SiC/MOSFET/IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCD57001FDWR2G accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57001FDWR2G provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCD57001 is available in the wide−body SOIC−16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements.