Discrete Semiconductor Products

SIS990DN-T1-GE3

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MOSFET 2N-CH 100V 12.1A PPAK1212

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 12.1A PPAK1212

Technical Specifications

Parameters and characteristics for this part

Specification	SIS990DN-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	12.1 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	8 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max [Max]	25 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Power - Max [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIS990DN-T1-GE3	4 V	85 mOhm	100 V	PowerPAK® 1212-8 Dual	Surface Mount	25 W	MOSFET (Metal Oxide)	12.1 A	-55 °C	150 °C	2 N-Channel (Dual)	250 pF	PowerPAK® 1212-8 Dual	8 nC

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General part information

Mosfet Array 100V 12.1A 25W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources