SIS990 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 100V 12.1A PPAK1212
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Power - Max [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4 V | 85 mOhm | 100 V | PowerPAK® 1212-8 Dual | Surface Mount | 25 W | MOSFET (Metal Oxide) | 12.1 A | -55 °C | 150 °C | 2 N-Channel (Dual) | 250 pF | PowerPAK® 1212-8 Dual | 8 nC |