Specification	BD239C

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	30 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

BD239B Series

NPN Epitaxial Silicon Transistor

Part	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type
ON Semiconductor BD239BTU	TO-220-3	TO-220-3	2 A	300 µA	150 °C	30 W	15	700 mV	Through Hole	80 V	NPN
ON Semiconductor BD239C	TO-220-3	TO-220-3	2 A	300 µA	150 °C	30 W	15	700 mV	Through Hole	100 V	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources