Discrete Semiconductor Products

BD239BTU

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

Obsolete

NPN EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BD239BTU

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	30 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

NPN Epitaxial Silicon Transistor

Part	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type
ON Semiconductor BD239BTU	TO-220-3	TO-220-3	2 A	300 µA	150 °C	30 W	15	700 mV	Through Hole	80 V	NPN
ON Semiconductor BD239C	TO-220-3	TO-220-3	2 A	300 µA	150 °C	30 W	15	700 mV	Through Hole	100 V	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources