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Discrete Semiconductor Products
FDMD8900
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V
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Discrete Semiconductor Products
FDMD8900
ActiveON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMD8900 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 17 A, 19 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2605 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power - Max [Max] | 2.1 W |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | 12-Power3.3x5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 304 | $ 0.99 | |
Description
General part information
FDMD8900 Series
This devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.
Documents
Technical documentation and resources