FDMD8900 Series

N-Channel PowerTrench® MOSFET 30V

Catalog

N-Channel PowerTrench® MOSFET 30V

Part	Mounting Type	Vgs(th) (Max) @ Id	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs
ON Semiconductor FDMD8900	Surface Mount	2.5 V	2.1 W	35 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	2 N-Channel (Dual)	2605 pF	30 V	17 A 19 A	12-Power3.3x5	4 mOhm

Catalog

N-Channel PowerTrench® MOSFET 30V

Key Features

• Q1: N-ChannelMax rDS(on)= 4 mΩ at VGS= 10 V, ID= 19 AMax rDS(on)= 5 mΩ at VGS= 4.5 V, ID= 17 AMax rDS(on)= 6.5 mΩ at VGS= 3.8 V, ID= 15 AMax rDS(on)= 8.3 mΩ at VGS= 3.5 V, ID= 14 A

• Q2: N-ChannelMax rDS(on)= 5.5 mΩ at VGS= 10 V, ID= 17 AMax rDS(on)= 6.5 mΩ at VGS= 4.5 V, ID= 15 AMax rDS(on)= 9 mΩ at VGS= 3.8 V, ID= 13 AMax rDS(on)= 12 mΩ at VGS= 3.5 V, ID= 12 A

• Ideal for Flexible Layout in Primary Side of Bridge Topology

• Termination is Lead-free and RoHS Compliant

• 100% UIL Tested

• Kelvin High Side MOSFET Drive Pin-out Capability

Description

This devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.