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SG6858TZ
Discrete Semiconductor Products

FDC6305N

Active
ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, 20V, 2.7A, 80MΩ

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SG6858TZ
Discrete Semiconductor Products

FDC6305N

Active
ON Semiconductor

DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, 20V, 2.7A, 80MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC6305N
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs5 nC
Input Capacitance (Ciss) (Max) @ Vds310 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.63
10$ 0.54
100$ 0.37
500$ 0.29
1000$ 0.24
Digi-Reel® 1$ 0.63
10$ 0.54
100$ 0.37
500$ 0.29
1000$ 0.24
Tape & Reel (TR) 3000$ 0.21
6000$ 0.20
9000$ 0.19
30000$ 0.18
NewarkEach (Supplied on Full Reel) 3000$ 0.21
6000$ 0.21
12000$ 0.20
18000$ 0.20
30000$ 0.20
ON SemiconductorN/A 1$ 0.19

Description

General part information

FDC6305N Series

These N-Channel low threshold 2.5V specified MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.