Discrete Semiconductor Products

SI2301CDS-T1-GE3

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MOSFET P-CH 20V 3.1A SOT23-3

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Discrete Semiconductor Products

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MOSFET P-CH 20V 3.1A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2301CDS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	405 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs	112 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI2301CDS-T1-GE3	3.1 A	20 V	MOSFET (Metal Oxide)	10 nC	1 V	8 V	SOT-23-3 (TO-236)	Surface Mount	2.5 V 4.5 V	-55 °C	150 °C	405 pF	P-Channel	SC-59 SOT-23-3 TO-236-3	112 mOhm

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General part information

P-Channel 20 V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources