SI2301 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 20V 3.1A SOT23-3
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.1 A | 20 V | MOSFET (Metal Oxide) | 10 nC | 1 V | 8 V | SOT-23-3 (TO-236) | Surface Mount | 2.5 V 4.5 V | -55 °C | 150 °C | 405 pF | P-Channel | SC-59 SOT-23-3 TO-236-3 | 112 mOhm |