Zenode.ai Logo
Beta
CSDxxxxF4T
Discrete Semiconductor Products

CSD23381F4T

Active
Texas Instruments

-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 175 MOHM, GATE ESD PROTECTION

Deep-Dive with AI

Search across all available documentation for this part.

CSDxxxxF4T
Discrete Semiconductor Products

CSD23381F4T

Active
Texas Instruments

-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 1 MM, 175 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD23381F4T
Current - Continuous Drain (Id) @ 25°C2.3 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.14 nC
Input Capacitance (Ciss) (Max) @ Vds236 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs175 mOhm
Supplier Device Package3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]-8 V
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.35
10$ 0.85
100$ 0.56
Digi-Reel® 1$ 1.35
10$ 0.85
100$ 0.56
Tape & Reel (TR) 250$ 0.49
500$ 0.44
750$ 0.41
1250$ 0.39
1750$ 0.37
2500$ 0.36
6250$ 0.32
12500$ 0.30
Texas InstrumentsSMALL T&R 1$ 0.74
100$ 0.48
250$ 0.36
1000$ 0.24

Description

General part information

CSD23381F4 Series

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

.

.