Discrete Semiconductor Products

APT11N80BC3G

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MOSFET COOLMOS 800 V 11 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET COOLMOS 800 V 11 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	APT11N80BC3G

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1585 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

800V Superjunction MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology APT11N80BC3G	10 V	TO-247 [B]	-55 °C	150 °C	156 W	11 A	Through Hole	800 V	450 mOhm	N-Channel	20 V	TO-247-3	60 nC	3.9 V	MOSFET (Metal Oxide)	1585 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

A family of 800V Superjunction MOSFETs available in a variety of current and package options.

Technical documentation and resources