Specification	BULD118D-1

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power - Max [Max]	20 W
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

BULD118D Series

High voltage fast-switching NPN power transistor

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature	Supplier Device Package	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]
STMicroelectronics BULD118D-1	IPAK TO-251-3 Short Leads TO-251AA	250 µA	Through Hole	150 °C	IPAK	TO-251	2 A	NPN	10	400 V	20 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

Technical documentation and resources