Discrete Semiconductor Products

BCV27_D87Z

Obsolete

TRANS NPN DARL 30V 1.2A SOT23-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 30V 1.2A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	BCV27_D87Z

Current - Collector (Ic) (Max) [Max]	1.2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20000
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Vce Saturation (Max) @ Ib, Ic [Max]	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

NPN Darlington Transistor

Part	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor BCV27_D87Z	1.2 A	20000	1 V	350 mW	Surface Mount	100 nA	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	SOT-23-3	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

Technical documentation and resources

No documents available