Catalog
NPN Darlington Transistor
Description
AI
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
Beta
⌘K
NPN Darlington Transistor
NPN Darlington Transistor
| Part | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic [Max] | Power - Max [Max] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 1.2 A | 20000 | 1 V | 350 mW | Surface Mount | 100 nA | -55 °C | 150 °C | SC-59 SOT-23-3 TO-236-3 | SOT-23-3 | 30 V |