Discrete Semiconductor Products

STU13N65M2

Obsolete

MOSFET N-CH 650V 10A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 10A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU13N65M2

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	590 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	430 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature	Supplier Device Package	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max)	Technology
STMicroelectronics STU13N65M2	N-Channel	4 V	650 V	430 mOhm	10 A	Through Hole	150 °C	IPAK	TO-251	590 pF	10 V	25 V	17 nC	IPAK TO-251-3 Short Leads TO-251AA	110 W	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.59

General part information

N-Channel 650 V 10A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources