Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6193 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 60 |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 14.07 | |
| 100 | $ 13.06 | |||
| Microchip Direct | N/A | 1 | $ 14.07 | |
| Newark | Each | 100 | $ 13.07 | |
| 500 | $ 12.56 | |||
Description
General part information
JANTX2N6193-Transistor Series
This specification covers the performance requirements for PNP silicon switching, 2N6193 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/561. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/561. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. Provisions for (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. The device packages for the encapsulated device types are as follows: (TO-39) and surface mount (U3). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/561.
Documents
Technical documentation and resources
