Discrete Semiconductor Products

G180N06S2

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MOSFET 2N-CH 60V 8A 8SOP

Discrete Semiconductor Products

Active

MOSFET 2N-CH 60V 8A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	G180N06S2

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	58 nC, 58 nC
Input Capacitance (Ciss) (Max)	2330 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SOP
Package Width	3.9 mm
Power - Max (Tc)	2 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.4 V

Part	Package Length	Package Name	Package Width	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Rds On (Max)	Power - Max (Tc)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)
Goford Semiconductor G180N06S2	0.154 in	8-SOIC 8-SOP	3.9 mm	58 nC 58 nC	2	N-Channel	Dual	2330 pF	8 A	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	20 mOhm	2 W	2.4 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 60V 8A (Tc) 2W (Tc) Surface Mount 8-SOP

Technical documentation and resources