Specification	FQP14N30

Current - Continuous Drain (Id) @ 25°C	14.4 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	147 W
Rds On (Max) @ Id, Vgs [Max]	290 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQP14N30 Series

Power MOSFET, N-Channel, QFET®, 300 V, 14.4 A, 290 mΩ, TO-220

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQP14N30	-55 °C	150 °C	MOSFET (Metal Oxide)	40 nC	300 V	1360 pF	Through Hole	290 mOhm	N-Channel	TO-220-3	14.4 A	5 V	30 V	147 W	TO-220-3	10 V
ON Semiconductor FQP14N30	-55 °C	150 °C	MOSFET (Metal Oxide)	40 nC	300 V	1360 pF	Through Hole	290 mOhm	N-Channel	TO-220-3	14.4 A	5 V	30 V	147 W	TO-220-3	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	294	$ 1.02
		294	$ 1.02

Description

General part information

FQP14N30 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.