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HMC591
RF and Wireless

HMC591-SX

Active
Analog Devices

2 WATT POWER AMPLIFIER CHIP, 6 - 10 GHZ

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DocumentsDatasheet
HMC591
RF and Wireless

HMC591-SX

Active
Analog Devices

2 WATT POWER AMPLIFIER CHIP, 6 - 10 GHZ

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC591-SX
Current - Supply1.34 A
Frequency [Max]10 GHz
Frequency [Min]6 GHz
Gain23 dBi
Mounting TypeSurface Mount
P1dB33 dBm
Package / CaseDie
RF TypeGeneral Purpose
Supplier Device PackageDie
Test Frequency [Max]10 GHz
Test Frequency [Min]6 GHz
Voltage - Supply7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 2$ 181.84
4$ 175.18
6$ 171.46
10$ 166.95
14$ 164.10
20$ 161.16
50$ 154.01

Description

General part information

HMC591-Die Series

The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33.5 dBm Output P1dB.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosTest Equipment & SensorsMilitary End-UseSpace

Documents

Technical documentation and resources