Discrete Semiconductor Products

FDB6670AL

Obsolete

MOSFET N-CH 30V 80A TO263AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 80A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	FDB6670AL

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDB6670AL	3 V	Surface Mount	33 nC	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	-65 °C	30 V	TO-263 (D2PAK)	6.5 mOhm	68 W	20 V	N-Channel	MOSFET (Metal Oxide)	80 A
ON Semiconductor FDB6670AL	3 V	Surface Mount	33 nC	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	-65 °C	30 V	TO-263 (D2PAK)	6.5 mOhm	68 W	20 V	N-Channel	MOSFET (Metal Oxide)	80 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 80A (Ta) 68W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources