FDB667 Series

Catalog

MOSFET N-CH 30V 80A TO263AB

Part	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDB6670AL	3 V	Surface Mount	33 nC	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	-65 °C	30 V	TO-263 (D2PAK)	6.5 mOhm	68 W	20 V	N-Channel	MOSFET (Metal Oxide)	80 A
ON Semiconductor FDB6670AL	3 V	Surface Mount	33 nC	4.5 V 10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	-65 °C	30 V	TO-263 (D2PAK)	6.5 mOhm	68 W	20 V	N-Channel	MOSFET (Metal Oxide)	80 A