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SG6858TZ
Discrete Semiconductor Products

FMB3904

Active
ON Semiconductor

BIPOLAR (BJT) ARRAY TRANSISTOR, NPN, 40 V, 700 MW, 200 MA, 40, SOT-23 ROHS COMPLIANT: YES

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SG6858TZ
Discrete Semiconductor Products

FMB3904

Active
ON Semiconductor

BIPOLAR (BJT) ARRAY TRANSISTOR, NPN, 40 V, 700 MW, 200 MA, 40, SOT-23 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFMB3904
Current - Collector (Ic) (Max) [Max]200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power - Max [Max]700 mW
Supplier Device PackageSuperSOT™-6
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.37
100$ 0.22
500$ 0.21
1000$ 0.14
Digi-Reel® 1$ 0.48
10$ 0.37
100$ 0.22
500$ 0.21
1000$ 0.14
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
30000$ 0.11
75000$ 0.10
NewarkEach (Supplied on Cut Tape) 1$ 0.51
10$ 0.32
25$ 0.27
50$ 0.23
ON SemiconductorN/A 1$ 0.11

Description

General part information

FMB3906 Series

Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor. This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.