Discrete Semiconductor Products

SIR808DP-T1-GE3

Obsolete

MOSFET N-CH 25V 20A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 20A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR808DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22.8 nC
Input Capacitance (Ciss) (Max) @ Vds	815 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	29.8 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIR808DP-T1-GE3	25 V	29.8 W	20 A	Surface Mount	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8	22.8 nC	2.5 V	N-Channel	-55 °C	150 °C	20 V	8.9 mOhm	4.5 V 10 V	815 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 20A (Tc) 29.8W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources