SIR808 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 25V 20A PPAK SO-8
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Technology | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 25 V | 29.8 W | 20 A | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 22.8 nC | 2.5 V | N-Channel | -55 °C | 150 °C | 20 V | 8.9 mOhm | 4.5 V 10 V | 815 pF |