Integrated Circuits (ICs)

2CG010BBC12N

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IC GATE DRVR HALF-BRIDGE MODULE

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Integrated Circuits (ICs)

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IC GATE DRVR HALF-BRIDGE MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	2CG010BBC12N

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	43 A
Current - Peak Output (Source, Sink) [custom]	43 A
Driven Configuration	Half-Bridge
Gate Type	IGBT, SiC MOSFET
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	1.65 V, 3.85 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	Module
Rise / Fall Time (Typ) [custom]	500 ns
Rise / Fall Time (Typ) [custom]	500 ns
Supplier Device Package	Module
Voltage - Supply [Max]	28 V
Voltage - Supply [Min]	13 V

Part	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Logic Voltage - VIL, VIH	Input Type	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Gate Type	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package
Tamura 2CG010DBC11N	28 V	13 V	Half-Bridge	43 A	43 A	2	1.65 V 3.85 V	Non-Inverting	Through Hole	500 ns	500 ns	IGBT	Independent	85 °C	-40 C	Module	Module
Tamura 2CG010BBC12N	28 V	13 V	Half-Bridge	43 A	43 A	2	1.65 V 3.85 V	Non-Inverting	Through Hole	500 ns	500 ns	IGBT SiC MOSFET	Independent	85 C	-40 ¯C	Module	Module
Tamura 2CG010BBC11N	28 V	13 V	Half-Bridge	43 A	43 A	2	1.65 V 3.85 V	Non-Inverting	Through Hole	500 ns	500 ns	IGBT SiC MOSFET	Independent	85 C	-40 ¯C	Module	Module
Tamura 2CG010DBC12N	28 V	13 V	Half-Bridge	43 A	43 A	2	1.65 V 3.85 V	Non-Inverting	Through Hole	500 ns	500 ns	IGBT SiC MOSFET	Independent	85 C	-40 ¯C	Module	Module
Tamura 2CG010BBC14N	28 V	13 V	Half-Bridge	43 A	43 A	2	1.65 V 3.85 V	Non-Inverting	Through Hole	500 ns	500 ns	IGBT SiC MOSFET	Independent	85 C	-40 ¯C	Module	Module
Tamura 2CG010BBC13N	28 V	13 V	Half-Bridge	43 A	43 A	2	1.65 V 3.85 V	Non-Inverting	Through Hole	500 ns	500 ns	IGBT SiC MOSFET	Independent	85 C	-40 ¯C	Module	Module

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General part information

Half-Bridge Gate Driver IC Non-Inverting Module

Technical documentation and resources