Specification	FCH190N65F-F155

Current - Continuous Drain (Id) @ 25°C	20.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	3225 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	5 V

FCH190N65F_F085 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-247

Part	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Grade	Qualification	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FCH190N65F-F085	Through Hole	N-Channel	-55 °C	150 °C	190 mOhm	5 V	208 W	MOSFET (Metal Oxide)	TO-247-3	20 V	20.6 A	TO-247-3	10 V	650 V	82 nC	3181 pF	Automotive	AEC-Q101
ON Semiconductor FCH190N65F-F155	Through Hole	N-Channel	-55 °C	150 °C			208 W	MOSFET (Metal Oxide)	TO-247-3	20 V	20.6 A	TO-247-3	10 V	650 V	78 nC	3225 pF			5 V	190 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.38
		10	$ 5.36
		450	$ 3.85
		1350	$ 3.30
		2250	$ 3.10
Newark	Each	250	$ 3.27
		500	$ 3.17
ON Semiconductor	N/A	1	$ 2.74

Description

General part information

FCH190N65F_F085 Series

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.