FCH190N65F_F085 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-247

Part	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Grade	Qualification	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor FCH190N65F-F085	Through Hole	N-Channel	-55 °C	150 °C	190 mOhm	5 V	208 W	MOSFET (Metal Oxide)	TO-247-3	20 V	20.6 A	TO-247-3	10 V	650 V	82 nC	3181 pF	Automotive	AEC-Q101
ON Semiconductor FCH190N65F-F155	Through Hole	N-Channel	-55 °C	150 °C			208 W	MOSFET (Metal Oxide)	TO-247-3	20 V	20.6 A	TO-247-3	10 V	650 V	78 nC	3225 pF			5 V	190 mOhm

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650V, 20.6A, 190mΩ, TO-247

Key Features

• 700 V @ TJ= 150°C

• Typ. RDS(on)= 168 mΩ

• Ultra Low Gate Charge (Typ. Qg= 60 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 186 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently SuperFETII is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved Boost PFC, Boost PFC for HEV-EV automotive.SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.