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SOT8001
Discrete Semiconductor Products

NX138AKHH

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Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

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SOT8001
Discrete Semiconductor Products

NX138AKHH

Active
Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationNX138AKHH
Current - Continuous Drain (Id) @ 25°C260 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.6 nC
Input Capacitance (Ciss) (Max) @ Vds15 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)2.3 W, 360 mW
Rds On (Max) @ Id, Vgs4.2 Ohm
Supplier Device PackageDFN0606-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.20
10$ 0.13
100$ 0.06
500$ 0.05
1000$ 0.05
2000$ 0.04
5000$ 0.04
Digi-Reel® 1$ 0.20
10$ 0.13
100$ 0.06
500$ 0.05
1000$ 0.05
2000$ 0.04
5000$ 0.04
N/A 29028$ 0.28
Tape & Reel (TR) 10000$ 0.03
20000$ 0.03
30000$ 0.03

Description

General part information

NX138AKH Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless, ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.