CSD16570Q5BT
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 0.82 MOHM
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CSD16570Q5BT
Active25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 0.82 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD16570Q5BT |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 14000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 195 W, 3.2 W |
| Rds On (Max) @ Id, Vgs | 0.59 mOhm |
| Supplier Device Package | 8-VSONP (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.95 | |
| 10 | $ 1.62 | |||
| 100 | $ 1.29 | |||
| Digi-Reel® | 1 | $ 1.95 | ||
| 10 | $ 1.62 | |||
| 100 | $ 1.29 | |||
| Tape & Reel (TR) | 250 | $ 1.26 | ||
| 500 | $ 1.17 | |||
| Texas Instruments | SMALL T&R | 1 | $ 2.09 | |
| 100 | $ 1.72 | |||
| 250 | $ 1.24 | |||
| 1000 | $ 0.93 | |||
Description
General part information
CSD16570Q5B Series
This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.
This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.
Documents
Technical documentation and resources
