CSD16570Q5B Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Technology
Texas Instruments CSD16570Q5BT	4.5 V 10 V	0.59 mOhm	Surface Mount	20 V	3.2 W 195 W	-55 °C	150 °C	8-PowerTDFN	25 V	1.9 V	N-Channel	8-VSONP (5x6)	14000 pF	100 A	MOSFET (Metal Oxide)
Texas Instruments CSD16570Q5B	4.5 V 10 V	0.59 mOhm	Surface Mount	20 V	3.2 W 195 W	-55 °C	150 °C	8-PowerTDFN	25 V	1.9 V	N-Channel	8-VSON-CLIP (5x6)	14000 pF	100 A	MOSFET (Metal Oxide)

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm

Key Features

• Extremely Low ResistanceLow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageExtremely Low ResistanceLow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications. This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.