2N3636UB/TR
Active175 V SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
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2N3636UB/TR
Active175 V SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3636UB/TR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 hFE |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 1 W |
| Supplier Device Package | UB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 100 | $ 13.36 | |
| Microchip Direct | N/A | 1 | $ 14.39 | |
| Newark | Each (Supplied on Full Reel) | 100 | $ 13.36 | |
| 500 | $ 12.85 | |||
Description
General part information
2N3636UB-Transistor Series
This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/357 and two levels of product assurance are provided for unencapsulated die (JANHC and JANKC).
Documents
Technical documentation and resources