Discrete Semiconductor Products
RQ3G110ATTB
ActiveRohm Semiconductor
POWER MOSFET, P CHANNEL, 40 V, 35 A, 0.0098 OHM, HSMT, SURFACE MOUNT
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Discrete Semiconductor Products
RQ3G110ATTB
ActiveRohm Semiconductor
POWER MOSFET, P CHANNEL, 40 V, 35 A, 0.0098 OHM, HSMT, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3G110ATTB |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35 A, 11 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 46 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2750 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) @ Id, Vgs | 12.4 mOhm |
| Supplier Device Package [custom] | 8-HSMT |
| Supplier Device Package [x] | 3.2 |
| Supplier Device Package [y] | 3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.34 | |
| 10 | $ 1.50 | |||
| 100 | $ 1.02 | |||
| 500 | $ 0.82 | |||
| 1000 | $ 0.75 | |||
| Digi-Reel® | 1 | $ 2.34 | ||
| 10 | $ 1.50 | |||
| 100 | $ 1.02 | |||
| 500 | $ 0.82 | |||
| 1000 | $ 0.75 | |||
| N/A | 5815 | $ 2.27 | ||
| Tape & Reel (TR) | 3000 | $ 0.65 | ||
Description
General part information
RQ3G110AT Series
RQ3G110AT is a power MOSFET, suitable for load switching applications.
Documents
Technical documentation and resources