RQ3G110AT Series
Manufacturer: Rohm Semiconductor
Beta
⌘K
POWER MOSFET, P CHANNEL, 40 V, 35 A, 0.0098 OHM, HSMT, SURFACE MOUNT
| Part | Vgs(th) (Max) @ Id | Vgs (Max) | Power Dissipation (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Supplier Device Package [x] | Supplier Device Package [custom] | Supplier Device Package [y] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 2.5 V | 20 V | 2 W | P-Channel | 46 nC | 150 °C | 3.2 | 8-HSMT | 3 | MOSFET (Metal Oxide) | 4.5 V 10 V | 11 A 35 A | 12.4 mOhm | 2750 pF | 8-PowerVDFN | 40 V | Surface Mount |