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CSDxxxxxF3x
Discrete Semiconductor Products

CSD15380F3

Active
Texas Instruments

20-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 1460 MOHM, GATE ESD PROTECTION

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CSDxxxxxF3x
Discrete Semiconductor Products

CSD15380F3

Active
Texas Instruments

20-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 1460 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD15380F3
Current - Continuous Drain (Id) @ 25°C500 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.281 nC
Input Capacitance (Ciss) (Max) @ Vds10.5 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs1190 mOhm
Supplier Device Package3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]10 V
Vgs(th) (Max) @ Id1.35 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.32
10$ 0.20
100$ 0.12
500$ 0.09
1000$ 0.08
Digi-Reel® 1$ 0.32
10$ 0.20
100$ 0.12
500$ 0.09
1000$ 0.08
Tape & Reel (TR) 3000$ 0.07
6000$ 0.06
9000$ 0.06
15000$ 0.05
21000$ 0.05
30000$ 0.05
75000$ 0.04
150000$ 0.04
Texas InstrumentsLARGE T&R 1$ 0.10
100$ 0.06
250$ 0.05
1000$ 0.03

Description

General part information

CSD15380F3 Series

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.